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GT10J312(Q)

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Part NumberGT10J312(Q)
ManufacturerToshiba Semiconductor and Storage
DescriptionIGBT 600V 10A 60W TO220SM
ead Free / RoHS StatusL Lead free / RoHS Compliant
In stock 5352 pcs
Reference Price
(In US Dollars)
Submit a Request For Quotation on quantities greater than those displayed.
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Quantity
Type Description
Part Number:GT10J312(Q)
Manufacturer:Toshiba Semiconductor and Storage
Description:IGBT 600V 10A 60W TO220SM
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Quantity Available:0
Data sheet:GT10J312(Q) PDF
Category:Discrete Semiconductor Products
Filter:Transistors - IGBTs - Single
Current - Collector (Ic) (Max):10 A
Current - Collector Pulsed (Icm):20 A
Gate Charge:-
IGBT Type:-
Input Type:Standard
Mounting Type:Surface Mount
Operating Temperature:150°C (TJ)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max:60 W
Product Status:Obsolete
Reverse Recovery Time (trr):200 ns
Supplier Device Package:TO-220SM
Switching Energy:-
Td (on/off) @ 25°C:400ns/400ns
Test Condition:300V, 10A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max):600 V
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