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MT3S111P(TE12L,F)

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Part NumberMT3S111P(TE12L,F)
ManufacturerToshiba Semiconductor and Storage
DescriptionRF TRANS NPN 6V 8GHZ PW-MINI
ead Free / RoHS StatusL Lead free / RoHS Compliant
In stock 1674 pcs
Reference Price
(In US Dollars)
Submit a Request For Quotation on quantities greater than those displayed.
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Quantity
Type Description
Part Number:MT3S111P(TE12L,F)
Manufacturer:Toshiba Semiconductor and Storage
Description:RF TRANS NPN 6V 8GHZ PW-MINI
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Quantity Available:674
Data sheet:MT3S111P(TE12L,F) PDF
Category:Discrete Semiconductor Products
Filter:Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max):100mA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Frequency - Transition:8GHz
Gain:10.5dB
Mounting Type:Surface Mount
Noise Figure (dB Typ @ f):1.25dB @ 1GHz
Operating Temperature:150°C (TJ)
Package / Case:TO-243AA
Power - Max:1W
Product Status:Active
Supplier Device Package:PW-MINI
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):6V
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