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FBG10N30BC

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Part NumberFBG10N30BC
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT100V30A COTS 4FSMD-B
ead Free / RoHS StatusL Lead free / RoHS Compliant
In stock 1045 pcs
Reference Price
(In US Dollars)
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Target Price(USD)
Quantity
Type Description
Part Number:FBG10N30BC
Manufacturer:EPC Space, LLC
Description:GAN FET HEMT100V30A COTS 4FSMD-B
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Quantity Available:45
Data sheet:FBG10N30BC PDF
Category:Discrete Semiconductor Products
Filter:Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drain to Source Voltage (Vdss):100 V
Drive Voltage (Max Rds On, Min Rds On):5V
FET Feature:-
FET Type:N-Channel
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:4-SMD, No Lead
Power Dissipation (Max):-
Product Status:Active
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 5V
Supplier Device Package:4-SMD
Technology:GaNFET (Gallium Nitride)
Vgs (Max):+6V, -4V
Vgs(th) (Max) @ Id:2.5V @ 5mA
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