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RN1710JE(TE85L,F)

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Part NumberRN1710JE(TE85L,F)
ManufacturerToshiba Semiconductor and Storage
DescriptionNPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
ead Free / RoHS StatusL Lead free / RoHS Compliant
In stock 3868 pcs
Reference Price
(In US Dollars)
Submit a Request For Quotation on quantities greater than those displayed.
Target Price(USD)
Quantity
Type Description
Part Number:RN1710JE(TE85L,F)
Manufacturer:Toshiba Semiconductor and Storage
Description:NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Quantity Available:3868
Data sheet:RN1710JE(TE85L,F) PDF
Category:Discrete Semiconductor Products
Filter:Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector (Ic) (Max):100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Frequency - Transition:250MHz
Mounting Type:Surface Mount
Package / Case:SOT-553
Power - Max:100mW
Product Status:Active
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):-
Supplier Device Package:ESV
Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):50V
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