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GA10JT12-263

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Part NumberGA10JT12-263
ManufacturerGeneSiC Semiconductor
DescriptionTRANS SJT 1200V 25A
ead Free / RoHS StatusL Lead free / RoHS Compliant
In stock 53030 pcs
Reference Price
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Submit a Request For Quotation on quantities greater than those displayed.
Target Price(USD)
Quantity
Type Description
Part Number:GA10JT12-263
Manufacturer:GeneSiC Semiconductor
Description:TRANS SJT 1200V 25A
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Quantity Available:0
Data sheet:GA10JT12-263 PDF
Category:Discrete Semiconductor Products
Filter:Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drain to Source Voltage (Vdss):1200 V
Drive Voltage (Max Rds On, Min Rds On):-
FET Feature:-
FET Type:-
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:1403 pF @ 800 V
Mounting Type:Surface Mount
Operating Temperature:175°C (TJ)
Package / Case:-
Power Dissipation (Max):170W (Tc)
Product Status:Active
Rds On (Max) @ Id, Vgs:120mOhm @ 10A
Supplier Device Package:-
Technology:SiC (Silicon Carbide Junction Transistor)
Vgs (Max):-
Vgs(th) (Max) @ Id:-
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