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G2R1000MT33J

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Part NumberG2R1000MT33J
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 4A TO263-7
ead Free / RoHS StatusL Lead free / RoHS Compliant
In stock 55498 pcs
Reference Price
(In US Dollars)
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Quantity
Type Description
Part Number:G2R1000MT33J
Manufacturer:GeneSiC Semiconductor
Description:SIC MOSFET N-CH 4A TO263-7
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Quantity Available:0
Data sheet:G2R1000MT33J PDF
Category:Discrete Semiconductor Products
Filter:Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drain to Source Voltage (Vdss):3300 V
Drive Voltage (Max Rds On, Min Rds On):20V
FET Feature:-
FET Type:N-Channel
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds:238 pF @ 1000 V
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 175°C (TJ)
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Power Dissipation (Max):74W (Tc)
Product Status:Active
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Supplier Device Package:TO-263-7
Technology:SiCFET (Silicon Carbide)
Vgs (Max):+20V, -5V
Vgs(th) (Max) @ Id:3.5V @ 2mA
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