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SCT2H12NYTB

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Part NumberSCT2H12NYTB
ManufacturerRohm Semiconductor
DescriptionSICFET N-CH 1700V 4A TO268
ead Free / RoHS StatusL Lead free / RoHS Compliant
In stock 100000+ pcs
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Quantity
Type Description
Part Number:SCT2H12NYTB
Manufacturer:Rohm Semiconductor
Description:SICFET N-CH 1700V 4A TO268
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Quantity Available:0
Data sheet:SCT2H12NYTB PDF
Category:Discrete Semiconductor Products
Filter:Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drain to Source Voltage (Vdss):1700 V
Drive Voltage (Max Rds On, Min Rds On):18V
FET Feature:-
FET Type:N-Channel
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds:184 pF @ 800 V
Mounting Type:Surface Mount
Operating Temperature:175°C (TJ)
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Max):44W (Tc)
Product Status:Active
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.1A, 18V
Supplier Device Package:TO-268
Technology:SiCFET (Silicon Carbide)
Vgs (Max):+22V, -6V
Vgs(th) (Max) @ Id:4V @ 410µA
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