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SIRA20DP-T1-RE3

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Part NumberSIRA20DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 25V 81.7A/100A PPAK
ead Free / RoHS StatusL Lead free / RoHS Compliant
In stock 100000+ pcs
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Quantity
Type Description
Part Number:SIRA20DP-T1-RE3
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 25V 81.7A/100A PPAK
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Quantity Available:0
Data sheet:SIRA20DP-T1-RE3 PDF
Category:Discrete Semiconductor Products
Filter:Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C:81.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):25 V
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
FET Feature:-
FET Type:N-Channel
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:10850 pF @ 10 V
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:PowerPAK® SO-8
Power Dissipation (Max):6.25W (Ta), 104W (Tc)
Product Status:Active
Rds On (Max) @ Id, Vgs:0.58mOhm @ 20A, 10V
Supplier Device Package:PowerPAK® SO-8
Technology:MOSFET (Metal Oxide)
Vgs (Max):+16V, -12V
Vgs(th) (Max) @ Id:2.1V @ 250µA
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