STMicroelectronics SGT120R65AL 650V E-Mode PowerGaN Transistor
STMicroelectronics SGT120R65AL 650V E-Mode PowerGaN Transistor offers 15A maximum current capability combined with well-established packaging technology and a Kelvin source connection for optimum gate driving. The resulting G-HEMT device provides extremely low conduction losses, high current capability, and ultra-fast switching operation to enable high power density and unbeatable efficiency. The SGT120R65AL is available n an industry-standard PowerFLAT 5×6 HV compact surface-mount package. Typical applications include PC adaptors, USB wall chargers, and wireless charging.
FEATURES
- Enhancement mode normally-off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge
- PowerFLAT 5x6 HV package for PowerGaN
APPLICATIONS
- PC adapters
- USB wall chargers
- Wireless chargers
SPECIFICATIONS
- 650V to 750V Drain-source voltage range
- -10V to 7V Gate-source voltage range
- 9A to 15A Continuous drain current range
- 36A Pulse drain current
- 6.25W to 192W Total power dissipation range
- -55°C to +150°C Temperature range
- Thermal resistance
- 0.65°C/W Junction-to-case
- 20°C/W Junction-to-board
